Gallium nitride (GaN) is an extremely hard and mechanically stable wide bandgap semiconductor with a hexagonal crystal structure. GaN has a vast range of applications in the modern world. It is used to manufacture semiconductor devices such as transistors and diodes.
GaN first came into the market in the 1990s as a crucial component in light emitting diodes (LEDs). It has a wide bandgap of 3.2 EV. Hence it is capable of handling very high temperatures and voltages.
● Imaging and sensing equipment
● Lasers equipment
● Wireless power transmission
● Photonics applications such as light emitting diodes (LEDs)
● Light detection and ranging (LiDar), e.g., in automated cars and drones
● Radiation-hardened transistors for satellites
● DC-DC converters for datacom applications, e.g., in centralized telecommunications centers and server farms
● Radiofrequency (RF) components, e.g., RF power amplifiers
● Solar cells in photovoltaic systems
The critical factors responsible for the adoption of GaN in the market are compact size, reliability, high efficiency, low on-resistance, fast switching speed, and high thermal conductivity, among other types of semiconductors such as silicon (Si) and silicon carbide (SiC).
The gallium nitride market is rapidly developing. The stakeholders involved in this ecosystem include primary GaN wafer providers, epitaxy manufacturers, device processing producers, module manufacturers, and their end clients. North America is the leading region in this sector's development, followed by Europe, Asia-Pacific, the U.K., China, and the Rest-of-the-World.
The global gallium nitride market was valued at $270.00 million in 2020 and is expected to reach $2,956.03 million by 2031, growing at a CAGR of 24.65% during the forecast period 2021-2031.
The gallium nitride market is currently fueled by several factors driving its growth forward. The most crucial factor is the use of GaN in electric vehicles to increase their efficiency. Furthermore, constant technological advancement in the GaN ecosystem and the suitability of GaN in radio frequency (RF) applications are taking place at the same time.
Among different applications of gallium nitride, radio frequency devices is the largest and expected to be the fastest-growing growing segment during the forecast period 2021-2031. Among different gallium nitride substrate types, GaN-on-Si dominates the market and is expected to be the largest substrate type during the forecast period.
GaN is a semiconductor material, and its most prominent property is its hardness. It is the next generation of semiconductor material after silicon which is being used in the field of electronics and many other applications.
The gallium nitride market is presently fueled by the rising trend of using GaN components in electric vehicles. The market is also being boosted with the use of GaN in LED hardware and high-speed transistors.
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